Si-MMIC BiCMOS low-noise high-linearity amplifiers for base station applications

Author

Boric-Lubecke, Olga ; Lin, Jenshan ; Ivanov, Tony ; Yan, Ran-Hong

Author_Institution

Bell Labs. Lucent Technol., Murray Hill, NJ, USA

fYear

2000

fDate

2000

Firstpage

181

Lastpage

184

Abstract

Low-noise, high-linearity amplifier chip sets designed for GSM 900 and DCS 1800 base station receivers are reported. The chip sets consisting of LNA and driver amplifier pairs, were fabricated using a 0.25 μm silicon BiCMOS process. Noise figures of 1.35 dB and 1.85 dB were achieved for LNA´s at 900 MHz and 1800 MHz, respectively, with corresponding gain values of 13 dB and 11 dB. Driver amplifiers with similar gain values achieved IIP3´s greater than 10 dBm, with noise figures under 2.1 dB

Keywords

BiCMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; cellular radio; elemental semiconductors; integrated circuit noise; radio receivers; silicon; 0.25 micron; 1.35 dB; 1.85 dB; 11 dB; 13 dB; 1800 MHz; 900 MHz; DCS 1800 base station receivers; GSM 900 base station receivers; LNA/driver amplifier pairs; Si; Si MMIC BiCMOS LNA; amplifier chip sets; base station applications; high-linearity amplifiers; low-noise amplifiers; Base stations; BiCMOS integrated circuits; Distributed control; Driver circuits; Frequency; GSM; Low-noise amplifiers; Noise figure; Noise measurement; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925755

Filename

925755