Title :
Si-MMIC BiCMOS low-noise high-linearity amplifiers for base station applications
Author :
Boric-Lubecke, Olga ; Lin, Jenshan ; Ivanov, Tony ; Yan, Ran-Hong
Author_Institution :
Bell Labs. Lucent Technol., Murray Hill, NJ, USA
Abstract :
Low-noise, high-linearity amplifier chip sets designed for GSM 900 and DCS 1800 base station receivers are reported. The chip sets consisting of LNA and driver amplifier pairs, were fabricated using a 0.25 μm silicon BiCMOS process. Noise figures of 1.35 dB and 1.85 dB were achieved for LNA´s at 900 MHz and 1800 MHz, respectively, with corresponding gain values of 13 dB and 11 dB. Driver amplifiers with similar gain values achieved IIP3´s greater than 10 dBm, with noise figures under 2.1 dB
Keywords :
BiCMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; cellular radio; elemental semiconductors; integrated circuit noise; radio receivers; silicon; 0.25 micron; 1.35 dB; 1.85 dB; 11 dB; 13 dB; 1800 MHz; 900 MHz; DCS 1800 base station receivers; GSM 900 base station receivers; LNA/driver amplifier pairs; Si; Si MMIC BiCMOS LNA; amplifier chip sets; base station applications; high-linearity amplifiers; low-noise amplifiers; Base stations; BiCMOS integrated circuits; Distributed control; Driver circuits; Frequency; GSM; Low-noise amplifiers; Noise figure; Noise measurement; Silicon;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925755
