Ultra-wideband, high-gain GaAs and InP-MMIC amplifiers

Author

Archer, John W. ; Dadello, Anna

Author_Institution

CSIRO, Epping, NSW, Australia

fYear

2000

fDate

2000

Firstpage

654

Lastpage

657

Abstract

This paper describes ultra-wide bandwidth GaAs and InP MMIC amplifiers, which have been developed for application in defence surveillance receivers and as a component of wideband microwave/photonic interfaces. These circuits have been implemented using a novel distributed amplifier topology, which provides superior gain-bandwidth performance when compared with a conventional distributed design. A typical InP-based, three-stage amplifier exhibits a bandwidth of 0.5-50 GHz with more than 20 dB gain, better than 10 dB input and output return loss

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; distributed amplifiers; gallium arsenide; indium compounds; wideband amplifiers; 0.5 to 50 GHz; 10 dB; 20 dB; GaAs; GaAs HEMT; InP; InP HEMT; circuit topology; defence surveillance receiver; distributed amplifier; gain-bandwidth product; microwave/photonic interface; return loss; three-stage amplifier; ultra-wideband MMIC amplifier; Bandwidth; Broadband amplifiers; Circuits; Gallium arsenide; Indium phosphide; MMICs; Microwave amplifiers; Optical receivers; Surveillance; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925918

Filename

925918