Title :
Characterization of Ba(Mg1/3Ta2/3)O3 and Bi2(Zn1/3Nb2/3)2O 7 microwave dielectrics in optical and microwave frequency regions
Author :
Cheng, Hsiu Fung ; Chen, Yi Chun ; Zhu, Ying Hao ; Lin, I.-Nan
Author_Institution :
Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Ba(Mg1/3Ta2/3)O3, BMT, and Bi2(Zn1/3Nb2/3)2O7 , BiZN, thin films were grown on [100] MgO single crystal substrates using pulsed laser deposition process. The high-frequency dielectric properties of thus obtained thin films were measured using optical transmission spectroscopy. Characteristics of BMT thin films were compared with those of BiZN thin films. BMT films need higher substrate temperature (~800°) and longer deposition time (~75 min) than those of BiZN thin films for getting better crystallinity. The index of refraction n and the absorption coefficient k of these films derived from their optical transmission spectra reveal that both optical parameters (n, k) for the BMT films are smaller than those of BiZN films. These behaviors are intimately correlated with lower microwave dielectric constant K and higher quality factor Q×f characteristics for BMT bulk materials, as compared with those of BiZN bulk materials
Keywords :
Q-factor; absorption coefficients; barium compounds; bismuth compounds; dielectric thin films; microwave spectra; permittivity; pulsed laser deposition; refractive index; 800 C; BMT thin film; Ba(Mg1/3Ta2/3)O3; BaMgTaO3; Bi2(Zn1/3Nb2/3)2O 7; Bi2(ZnNb)2O7; BiZN thin film; MgO single crystal substrate; absorption coefficient; crystallinity; microwave dielectric constant; optical parameters; optical transmission spectra; pulsed laser deposition; quality factor; refractive index; Bismuth; Dielectric materials; Dielectric substrates; Dielectric thin films; Optical films; Optical materials; Optical refraction; Pulsed laser deposition; Sputtering; Zinc;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925980
