Broadband monolithic GaAs-based HEMT diode mixers

Author

Deng, K.L. ; Wu, Y.B. ; Tang, Y.L. ; Wang, H. ; Chen, C.H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

2000

Firstpage

1135

Lastpage

1138

Abstract

Broad-band monolithic diode mixers covering 17.5-33 GHz with different topologies are designed, fabricated and tested. The topologies under investigation include the singly balanced mixer with 90° and 180° coupler and the sub-harmonically pumped (SHP) mixer. These monolithic microwave integrated circuits are fabricated using a 0.2-μm pseudomorphic HEMT foundry process on a 4-mil thick GaAs substrate, and thus the measurement results for each topology are evaluated on a fair basis. The SHP mixer, with a miniature size of 1.3 mm×1.1 mm, demonstrates 10-12 dB conversion loss at 17.5-33 GHz of RF with 2.5-GHz IF and both LO-to-RF, LO-to-IF isolations of both better than 25 dB. It outmatches the singly balanced approaches, as well as achieves rival performance compared with previously reported results at similar frequencies

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; gallium arsenide; microwave diodes; 0.2 micron; 10 to 12 dB; 17.5 to 33 GHz; GaAs; GaAs substrate; LO-to-IF isolation; LO-to-RF isolation; broadband pseudomorphic HEMT diode mixer; circuit topology; conversion loss; coupler; monolithic microwave integrated circuit; singly balanced mixer; subharmonically pumped mixer; Circuit testing; Circuit topology; Coupling circuits; Diodes; Foundries; HEMTs; MMICs; Microwave integrated circuits; Monolithic integrated circuits; PHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.926030

Filename

926030