DocumentCode :
174621
Title :
Design space exploration of an NVM-based memory hierarchy
Author :
Seungjae Baek ; Daeyeon Son ; Dongwoo Kang ; Jongmoo Choi ; Sangyeun Cho
Author_Institution :
Dept. of Comput. Sci., Dankook Univ., Yongin, South Korea
fYear :
2014
fDate :
19-22 Oct. 2014
Firstpage :
224
Lastpage :
229
Abstract :
Non-volatile memory (NVM) technologies support both byte addressability (like DRAM) and non-volatility (like disks). This characteristic makes it feasible for NVM to be employed at any layer of the memory hierarchy including CPU cache, main memory, file cache, storage, and hybrid memory. In this paper, we explore new challenges and opportunities that arise when NVM is introduced as a file cache in the memory hierarchy. One opportunity is that cache does not require long-term non-volatility since data are replaced when working sets are changed. This feature is well matched with NVM, which has limited retention time. In addition, the retention time of NVM is inverse proportional to the write latency, giving a chance to optimize the write performance. However, the limited retention time raises a new challenge that it may cause the hit ratio reduction and lead to cache performance degradation. To tackle this challenge, we propose a new inter-reference gap (IRG) based cache management scheme that writes data with different retention times according to their IRGs. Our proposal builds on the fact that block accesses of typical workloads show unique and regular patterns in terms of access intervals. Experimental results show that our scheme enhances system performance by up to 42% (33% on average), compared with the conventional LRU based cache management scheme.
Keywords :
cache storage; random-access storage; CPU cache; DRAM; IRG; LRU; NVM-based storage memory hierarchy; byte addressability; cache management scheme; cache performance degradation; design space exploration; file cache; interreference gap; limited retention time; nonvolatile memory; write latency; Cache memory; Energy consumption; Nonvolatile memory; Performance gain; Phase change materials; Random access memory; System performance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design (ICCD), 2014 32nd IEEE International Conference on
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/ICCD.2014.6974685
Filename :
6974685
Link To Document :
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