DocumentCode
1746299
Title
Highly reliable 40 Gb/s electroabsorption modulator grown on InP:Fe substrate
Author
Takagi, K. ; Tada, H. ; Ishimura, E. ; Aoyagi, T. ; Nishimura, T. ; Omura, E.
Author_Institution
High Frequency & Opt. Semiconductor Div., Mitsubishi Electr. Corp., Hyogo, Japan
Volume
1
fYear
2001
fDate
17-22 March 2001
Abstract
An electroabsorption modulator with unburied ridge waveguide has been fabricated on InP:Fe substrate. The cut-off frequency was 40 GHz and the extinction ratio was 15 dB. The estimated lifetime at 25/spl deg/C was over 1.7/spl times/10/sup 7/ hours.
Keywords
electro-optical modulation; electroabsorption; indium compounds; integrated optics; iron; life testing; optical communication equipment; optical testing; optical waveguides; ridge waveguides; 1.7E7 h; 25 C; 40 GHz; InP:Fe; InP:Fe substrate; cut-off frequency; estimated lifetime; extinction ratio; highly reliable Gb/s electroabsorption modulator; life testing; unburied ridge waveguide; Capacitance; Extinction ratio; High speed optical techniques; Optical feedback; Optical fiber communication; Optical films; Optical modulation; Optical waveguides; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-655-9
Type
conf
Filename
927880
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