Title :
Highly reliable 1.3 /spl mu/m AlGaInAs FP lasers with low power penalty under uncooled 10 Gbps operation at 85/spl deg/C
Author :
Kadowaki, T. ; Hanamaki, Y. ; Takiguchi, T. ; Tanaka, T. ; Takemi, M. ; Mihashi, Y. ; Omura, E. ; Tomita, N.
Author_Institution :
HF & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
We have realized highly reliable 1.3 /spl mu/m AlGaInAs FP lasers with low power penalty of 1.4 dB at 10 Gbps and 85/spl deg/C. The MTTF was estimated over 1.5/spl times/10/sup 5/ hours and no deterioration of (catastrophic optical damage)COD level was observed during the life test.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beam effects; laser reliability; life testing; optical testing; quantum well lasers; ridge waveguides; semiconductor device reliability; semiconductor device testing; waveguide lasers; 1.3 micron; 1.5/spl times/10/sup 5/ hour; 85 C; AlGaInAs; AlGaInAs FP lasers; catastrophic optical damage; highly reliable lasers; life test; low power penalty; ridge waveguide quantum well lasers; uncooled operation; Frequency measurement; Laser modes; Length measurement; Life testing; Power generation; Power lasers; Pulse measurements; Signal analysis; Temperature distribution; Waveguide lasers;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-655-9
