DocumentCode :
1746470
Title :
Vertically coupled GaAs-AlGaAs and GaInAsP-InP microring resonators
Author :
Grover, R. ; Absil, P.P. ; Van, V. ; Hryniewicz, J.V. ; Little, B.E. ; King, O. ; Johnson, F.G. ; Calhoun, L.C. ; Ho, P.-T.
Author_Institution :
Lab. for Phys. Sci., College Park, MD, USA
Volume :
3
fYear :
2001
fDate :
17-22 March 2001
Abstract :
Single transverse mode vertically coupled semiconductor microring resonators were made using a novel fabrication technique without regrowth. GaAs-AlGaAs and GaInAsP-InP devices are demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; micro-optics; micromechanical resonators; optical communication equipment; optical directional couplers; optical fabrication; optical resonators; wavelength division multiplexing; DWDM; GaAs-AlGaAs; GaAs-AlGaAs microring resonators; GaInAsP-InP; GaInAsP-InP microring resonators; optical fabrication technique; semiconductor microring resonators; single transverse mode; vertically coupled; Etching; Gallium arsenide; Indium phosphide; Optical filters; Optical resonators; Polarization; Polymers; Refractive index; Resonance; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-655-9
Type :
conf
Filename :
928359
Link To Document :
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