Title :
Electroabsorption modulators monolithically integrated with semiconductor optical amplifiers for zero insertion loss utilizing InGaAs/InGaAlAs MQW material
Author :
Dan Zhou ; Yixi Lu ; Jianhua Wang
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
Nearly zero insertion loss was obtained in 200-/spl mu/m long electroabsorption modulators by integrating 400-/spl mu/m. long semiconductor optical amplifiers with 120/spl sim/150-mA driving current. InGaAs/InGaAlAs MQW material was for the first time used in the integration.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical losses; semiconductor optical amplifiers; semiconductor quantum wells; 120 to 150 mA; 200 micron; 400 micron; InGaAs-InGaAlAs; InGaAs/InGaAlAs MQW material; driving current; electroabsorption modulators; monolithically integrated; semiconductor optical amplifiers; zero insertion loss; Indium gallium arsenide; Insertion loss; Integrated optics; Optical losses; Optical materials; Optical modulation; Optical waveguides; Quantum well devices; Semiconductor materials; Semiconductor optical amplifiers;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-655-9
