Title :
Reduced cross-talk semiconductor optical amplifiers based on type-II quantum wells
Author :
Khurgin, J.B. ; Kang, J.U. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
It is shown that using type-II QW active regions in SOA´s will allow up to 10 dB reduction in the interchannel crosstalk at high (>2.5 Gbit/s) data rates. The reduction can be attained via a corresponding increase in saturation energy without any reduction in the efficiency.
Keywords :
optical crosstalk; optical saturation; quantum well lasers; semiconductor optical amplifiers; 2.5 Gbit/s; AlGaInAs-AlGaAsSb-AlInAs; SOA; efficiency; high data rates; interchannel crosstalk; reduced cross-talk semiconductor optical amplifiers; saturation energy; type-II QW active regions; type-II quantum wells; Charge carrier processes; Electron optics; Erbium-doped fiber amplifier; Indium phosphide; Optical crosstalk; Optical saturation; Optical waveguides; Radiative recombination; Semiconductor optical amplifiers; Spontaneous emission;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-655-9
