Polarization insensitive optical amplifiers in AlInGaAs

Author

Koonath, P. ; Kim, S. ; Cho, W.-J. ; Gopinath, A.

Author_Institution

Electr. Comput. Eng. Dept., Minnesota Univ., Minneapolis, MN, USA

Volume

3

fYear

2001

fDate

17-22 March 2001

Abstract

Optical gain calculations have been performed for polarization insensitive amplifiers in AlInGaAs/InP for both 1300 nm and 1550 nm windows. Amplifiers, fabricated and tested at 1300 nm, show less than 0.3 dB gain difference between TE and TM modes.

Keywords

III-V semiconductors; aluminium compounds; gain measurement; gallium arsenide; indium compounds; laser beams; laser modes; laser variables measurement; optical fabrication; optical testing; quantum well lasers; ridge waveguides; semiconductor optical amplifiers; waveguide lasers; 1300 nm; 1550 nm; AlInGaAs; AlInGaAs-InP; AlInGaAs/InP; TE modes; TM modes; amplifiers; anti-reflection coatings; fabrication; gain difference; maximum gain difference; polarization insensitive amplifiers; polarization insensitive optical amplifiers; polarization insensitive spectral range; testing; Conducting materials; Optical amplifiers; Optical materials; Optical polarization; Optical sensors; Optical wavelength conversion; Semiconductor optical amplifiers; Stimulated emission; Tellurium; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2001. OFC 2001

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-655-9

Type

conf

Filename

928520