Title :
Deeply etched 1.55 μm wavelength distributed-reflector lasers with vertical grating
Author :
Wiedmann, J. ; Ebihara, K. ; Kim, H.-C. ; Matsui, K. ; Tamura, S. ; Chen, B. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
A new type of distributed-reflector (DR) laser with a vertically aligned grating (VG) is proposed and was fabricated using CH4/H2 reactive ion etching (RIE) without any regrowth. On the rear facet, a 15-element semiconductor/benzocyclobutene (BCB) distributed Bragg reflector (DBR) was used to increase the output efficiency and to decrease the threshold current. The threshold current was as low as 12 mA and the differential quantum efficiency as high as 42% from the front cleaved facet under room temperature operation for 220-μm-long cavity and 6-μm-wide stripe devices. GaInAsP VG-DR lasers with a fifth order grating (Λ=1200 nm) showed quasi single-mode operation with an SMSR of 35 dB
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical fabrication; quantum well lasers; sputter etching; 12 mA; 15-element semiconductor/benzocyclobutene distributed Bragg reflector; 220 mum; 42 percent; 6 mum; CH4/H2 RIE; GaInAsP; GaInAsP VG-DR lasers; SMSR; differential quantum efficiency; distributed-reflector lasers; fifth order grating; front cleaved facet; methane-H2; output efficiency; quasi single-mode operation; reactive ion etching; room temperature operation; threshold current; vertically aligned grating; Bragg gratings; Distributed Bragg reflectors; Distributed feedback devices; Dry etching; Hydrogen; Laser feedback; Laser modes; Semiconductor lasers; Slabs; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929008
