Title :
Effect of strain relaxation layers in high Indium content metamorphic InGaAs/InAlAs modulation doped heterostructures
Author :
Gozu, S. ; Kita, T. ; Sato, H. ; Yamada, S.
Author_Institution :
RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
Abstract :
We have investigated effect of residual strain appeared in the transport and optical properties of high indium content metamorphic In 0.75Ga0.25As/In0.75Al0.25As modulation doped heterostructures grown via (inverse step: IS-) step graded buffer (SGB). The effect of residual strain was controlled by IS structure and a drastic decrease of residual strain (about one third) was observed. We have also observed an improved low temperature (77 K) electron mobility, when the IS buffer was used. We found that the residual strain is one of the important interface condition which determines the low temperature (77 K) electron mobility
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; indium compounds; semiconductor heterojunctions; 77 K; In0.75Ga0.25As-In0.75Al0.25 As; InGaAs/InAlAs metamorphic modulation doped heterostructure; electron mobility; indium content; inverse step structure; optical properties; residual strain; step graded buffer; strain relaxation layer; transport properties; Capacitive sensors; Electron mobility; Epitaxial layers; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical buffering; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929017
