DocumentCode
1746777
Title
Selective MOVPE of microarray waveguide for densely integrated photonic devices
Author
Sudo, Shinya ; Kudo, Koji ; Mori, Kazuo ; Sasaki, Tatsuya
Author_Institution
Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan
fYear
2001
fDate
2001
Firstpage
390
Lastpage
393
Abstract
We studied the mask interference effect in selective metal-organic vapor-phase epitaxy (MOVPE) of a microarray optical waveguide. We investigated the characteristics of waveguides having mask interference effects. Based on the experimental results, we developed a method of simulating the characteristics of a microarray waveguide that uses the mask interference constant, which depends on growth pressure. The simulation can account for the experimental results under different growth pressures and should be very useful for designing the microarray waveguides. In particular, we can use it to control the PL-wavelength profile of the microarray waveguide grown under atmospheric pressure, which is important for fabricating densely integrated photonic devices
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; light interference; masks; optical arrays; optical fabrication; optical waveguides; photoluminescence; quantum well devices; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP; InGaAsP compressively strained MQW; InP; InP substrate; PL-wavelength profile control; SiO2; SiO2 mask stripes; densely integrated photonic devices; growth pressure; mask interference; mask interference constant; microarray waveguide; microarray waveguide design; selective MOVPE; selective metal-organic vapor-phase epitaxy; simulation; Atmospheric waves; Epitaxial growth; Epitaxial layers; Integrated optics; Interference; National electric code; Optical devices; Optical waveguides; Photonic band gap; Semiconductor waveguides;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929140
Filename
929140
Link To Document