• DocumentCode
    1746777
  • Title

    Selective MOVPE of microarray waveguide for densely integrated photonic devices

  • Author

    Sudo, Shinya ; Kudo, Koji ; Mori, Kazuo ; Sasaki, Tatsuya

  • Author_Institution
    Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    390
  • Lastpage
    393
  • Abstract
    We studied the mask interference effect in selective metal-organic vapor-phase epitaxy (MOVPE) of a microarray optical waveguide. We investigated the characteristics of waveguides having mask interference effects. Based on the experimental results, we developed a method of simulating the characteristics of a microarray waveguide that uses the mask interference constant, which depends on growth pressure. The simulation can account for the experimental results under different growth pressures and should be very useful for designing the microarray waveguides. In particular, we can use it to control the PL-wavelength profile of the microarray waveguide grown under atmospheric pressure, which is important for fabricating densely integrated photonic devices
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; light interference; masks; optical arrays; optical fabrication; optical waveguides; photoluminescence; quantum well devices; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP; InGaAsP compressively strained MQW; InP; InP substrate; PL-wavelength profile control; SiO2; SiO2 mask stripes; densely integrated photonic devices; growth pressure; mask interference; mask interference constant; microarray waveguide; microarray waveguide design; selective MOVPE; selective metal-organic vapor-phase epitaxy; simulation; Atmospheric waves; Epitaxial growth; Epitaxial layers; Integrated optics; Interference; National electric code; Optical devices; Optical waveguides; Photonic band gap; Semiconductor waveguides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929140
  • Filename
    929140