Fabrication of InGaAsP/InP Mach-Zehnder interferometer optical amplifier switches by metalorganic vapor phase selective area epitaxy

Author

Futakuchi, Naoki ; Song, Xueliang ; Miyashita, Daisuke ; Kato, Masaki ; Nakano, Yoshiaki

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

fYear

2001

fDate

2001

Firstpage

583

Lastpage

586

Abstract

Recent ultra-fast optical-fiber communication systems require various functional optical components, such as all optical switches. We have fabricated InGaAsP/InP Mach-Zehnder interferometer optical switches monolithically integrated with semiconductor optical amplifiers (SOAs) using a single-step MOVPE selective area growth and two types of patterning and etching process. Preliminary optical switching experiment revealed large carrier-induced index change in the selective-area-grown multiple quantum well SOAs. Furthermore, all optical switching experiment has successfully been demonstrated in these fabricated devices

Keywords

III-V semiconductors; Mach-Zehnder interferometers; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical switches; quantum well devices; semiconductor optical amplifiers; vapour phase epitaxial growth; InGaAsP-InP; InGaAsP/InP Mach-Zehnder interferometer; all-optical switch; etching process; fabrication; metalorganic vapor phase epitaxy; monolithic integration; multiple quantum well semiconductor optical amplifier; patterning process; selective area growth; ultra-fast optical fiber communication system; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Optical device fabrication; Optical devices; Optical interferometry; Optical switches; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929218

Filename

929218