DocumentCode
1746801
Title
Transmission measurements at 1.55 μm on photonic-crystal ultrashort bend waveguides fabricated on InP based guiding layer
Author
Talneau, A. ; Le Gouezigou, L. ; Bouadma, N.
fYear
2001
fDate
2001
Firstpage
607
Lastpage
609
Abstract
The wavelength dependent transmission through a double-60° bend waveguide defined in a two-dimensional photonic crystal (2D PC) is measured on an extended WDM range (1500-1590 nm). The fabrication of the photonic crystal into a GaInAsP confining layer on an InP substrate using CH4-based reactive ion etching (RIE) is also reported
Keywords
III-V semiconductors; indium compounds; light transmission; optical fabrication; optical waveguides; photonic band gap; sputter etching; waveguide discontinuities; 1.55 micron; 1500 to 1590 nm; GaInAsP; GaInAsP confining layer; InP; InP guiding layer; InP substrate; WDM; fabrication; methane reactive ion etching; two-dimensional photonic crystal; ultrashort bend waveguide; wavelength dependent transmission; Calibration; Etching; Filling; Optical coupling; Optical fiber polarization; Optical polarization; Optical reflection; Optical waveguides; Photonic crystals; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929227
Filename
929227
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