DocumentCode
1746836
Title
Capacity limits and matching properties of lateral flux integrated capacitors
Author
Aparicio, Roberto ; Hajimiri, Ali
Author_Institution
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fYear
2001
fDate
2001
Firstpage
365
Lastpage
368
Abstract
Theoretical limits for the capacitance density of lateral flux and quasi-fractal capacitors are calculated. These limits are used to investigate the efficiency of various capacitive structures such as lateral flux and quasi-fractal structures. This study leads to two new capacitor structures with high lateral field efficiency. Simulation and experimental results demonstrate higher capacity and superior matching properties compared to the standard horizontal parallel plate and previously reported lateral-field capacitors
Keywords
capacitance; capacitors; integrated circuit design; monolithic integrated circuits; capacitance density; capacitive structures; capacity limits; lateral flux integrated capacitors; matching properties; quasi-fractal capacitors; Capacitance; Capacitors; Circuit simulation; Dielectrics; Electrostatics; Linearity; Lithography; Permittivity; Q factor; Upper bound;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location
San Diego, CA
Print_ISBN
0-7803-6591-7
Type
conf
DOI
10.1109/CICC.2001.929803
Filename
929803
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