Title :
Capacity limits and matching properties of lateral flux integrated capacitors
Author :
Aparicio, Roberto ; Hajimiri, Ali
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Theoretical limits for the capacitance density of lateral flux and quasi-fractal capacitors are calculated. These limits are used to investigate the efficiency of various capacitive structures such as lateral flux and quasi-fractal structures. This study leads to two new capacitor structures with high lateral field efficiency. Simulation and experimental results demonstrate higher capacity and superior matching properties compared to the standard horizontal parallel plate and previously reported lateral-field capacitors
Keywords :
capacitance; capacitors; integrated circuit design; monolithic integrated circuits; capacitance density; capacitive structures; capacity limits; lateral flux integrated capacitors; matching properties; quasi-fractal capacitors; Capacitance; Capacitors; Circuit simulation; Dielectrics; Electrostatics; Linearity; Lithography; Permittivity; Q factor; Upper bound;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929803
