Title :
Numerical analysis of 3-D, unsteady heat and flow in rapid thermal processing
Author :
Chung, J.D. ; Cho, Y.M. ; Lee, J.S. ; Jung, C.H. ; Choi, Y.J. ; Jung, K.
Author_Institution :
Dept. of Mech. Eng, Sejong Univ., Seoul, South Korea
Abstract :
Rapid thermal processing (RTP) has become a key fabrication technology for advanced integrated circuits. By virtue of advances in computing resources, numerical simulations provide the semiconductor processing industry with one of the most promising and productive tools especially for significant time-to-market reduction. Numerical modeling offers the understanding of the highly coupled physics in RTP, such as radiative heat transfer, transient flow, and complex geometry of RTP chamber. This paper deals with numerical analysis of three-dimensional, unsteady heat and fluid flow in a complex RTP chamber. A commercial package, STAR-CD, is used to solve the governing equations by an unstructured finite volume method. Surface radiative heat transfer is the most dominant mode of heat transfer in RTP and properly implemented in this simulation. The validation of present simulation has been conducted in three-fold; (1) convective heat transfer considering rotation effect; (2) evaluation of view factor; and (3) comparison with experiment. The results indicate that the proposed numerical methodologies are robust. Parametric studies while varying lamp power, lamp configuration, radiative properties and chamber configuration have also been conducted to investigate the uniformity of wafer temperature
Keywords :
convection; finite volume methods; flow instability; rapid thermal processing; semiconductor technology; 3-D unsteady fluid flow; 3-D unsteady heat flow; STAR-CD package; advanced integrated circuits fabrication; chamber configuration; complex geometry; convective heat transfer; fabrication technology; governing equations; heat transfer; lamp configuration; lamp power variation; numerical analysis; numerical modeling; radiative heat transfer; radiative properties; rapid thermal processing; rotation effect; semiconductor processing industry; surface radiative heat transfer; time-to-market reduction; transient flow; unstructured finite volume method; view factor evaluation; wafer temperature uniformity; Computer industry; Fabrication; Heat transfer; Integrated circuit technology; Lamps; Numerical analysis; Numerical simulation; Rapid thermal processing; Semiconductor process modeling; Time to market;
Conference_Titel :
Industrial Electronics, 2001. Proceedings. ISIE 2001. IEEE International Symposium on
Conference_Location :
Pusan
Print_ISBN :
0-7803-7090-2
DOI :
10.1109/ISIE.2001.931651
