Ultra shallow junction formation using excimer laser annealing for ultra small devices

Author

Jung, Eun Sik ; Bea, Ji Chel ; Lee, Yong Jae

Author_Institution

Dept. of Electron. Eng., Dongeui Univ., South Korea

Volume

1

fYear

2001

fDate

2001

Firstpage

586

Abstract

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition (UHVCVD) and excimer laser annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2×10¹⁴/cm²), excimer laser source (λ=248 nm) is KrF, and sheet resistances are measured to 1 kΩ/□ at junction depth of 15 nm

Keywords

MOSFET; chemical vapour deposition; elemental semiconductors; excimer lasers; laser beam annealing; p-n junctions; semiconductor device manufacture; silicon; vacuum deposition; KrF excimer laser source; Si:As; arsenic dosage; damage-free process; deep sub-micron device; excimer laser annealing; high speed devices; junction formation technologies; low energy ion implantation; low power devices; sheet resistances; silicon devices; solid phase diffusion; ultra shallow junction formation; ultra small devices; ultra-high vacuum chemical vapor deposition; vapor phase diffusion; Chemical lasers; Chemical technology; Doping profiles; Energy measurement; Ion implantation; Manufacturing; Rapid thermal annealing; Rapid thermal processing; Solid lasers; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 2001. Proceedings. ISIE 2001. IEEE International Symposium on

Conference_Location

Pusan

Print_ISBN

0-7803-7090-2

Type

conf

DOI

10.1109/ISIE.2001.931859

Filename

931859