DocumentCode :
1748
Title :
Fault Models and Test Methods for Subthreshold SRAMs
Author :
Chen-Wei Lin ; Hung-Hsin Chen ; Hao-Yu Yang ; Chin-Yuan Huang ; Chao, Mango C.-T ; Rei-Fu Huang
Author_Institution :
Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
62
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
468
Lastpage :
481
Abstract :
Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold SRAM design. However, the test methods regarding those newly developed subthreshold SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold SRAM designs into three types, study the faulty behavior of open defects and address decoders faults on each type of designs, and then identify the faults which may not be covered by a traditional SRAM test method. We will also discuss the impact of open defects and threshold-voltage mismatch on sense amplifiers under subthreshold operations. A discussion about the temperature at test is also provided.
Keywords :
CMOS memory circuits; SRAM chips; amplifiers; decoding; fault diagnosis; integrated circuit design; integrated circuit testing; SRAM fault model; SRAM test method; decoder faults; open defect faulty behavior; sense amplifiers; subthreshold SRAM design; threshold-voltage mismatch; Circuit faults; MOSFETs; Random access memory; Resistance; Stability analysis; Stress; SRAM; open defect; stability fault; sub-V_{th}; subthreshold; testing;
fLanguage :
English
Journal_Title :
Computers, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9340
Type :
jour
DOI :
10.1109/TC.2011.252
Filename :
6112749
Link To Document :
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