DocumentCode :
1749143
Title :
Incorporation technology of fullerene and conductive properties of fullerite in ion tracks of polymer film
Author :
Berdinsky, Alexander S. ; Fink, Dietmar ; Chadderton, Lewis T. ; Krasnoshtanov, Sergey M.
fYear :
2001
fDate :
2001
Firstpage :
109
Lastpage :
114
Abstract :
We have shown in first test experiments that fullerite can be deposited along etched ion tracks in polymers via simple deposition technology from high concentrated solution of fullerene in toluene. We have tried to deposit semiconducting fullerite along etched in KOH solution ion tracks with several hundred nanometers diameter in polymer foil of 10 μm thickness. It has shown that fullerene was deposited inside the ion tracks thereby the randomly distributed fullerite columns were formed
Keywords :
electrical conductivity; etching; fullerenes; ion beam effects; particle tracks; polymer films; KOH etching; conductive properties; fullerene incorporation technology; ion track; polymer film; semiconducting fullerite; Art; Ion beams; Microelectronics; Nanobioscience; Nanoscale devices; Polymer films; Semiconductivity; Semiconductor devices; Solids; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0347-0
Type :
conf
DOI :
10.1109/SREDM.2001.939168
Filename :
939168
Link To Document :
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