Population inversion in an optically-pumped single quantum well

Author

Green, T.J. ; Xu, W.

Author_Institution

Dept. of Mater. Eng., Wollongong Univ., NSW, Australia

fYear

2000

fDate

2000

Firstpage

224

Lastpage

227

Abstract

An optically-pumped intersubband laser generator is proposed in which the continuum states above an Al_0.2Ga_0.8As-GaAs-Al_0.2Ga_0.8As single quantum well with a width of L=17 nm serve as the highest level in a four-level laser system. The design allows much greater flexibility in the choice of pumping source and simplifies considerably the device fabrication. We have obtained the electrode subband structure of the proposed device and utilized a simple rate equation approach to examine the electron density in different states under optical pumping

Keywords

III-V semiconductors; aluminium compounds; electron density; gallium arsenide; interface states; laser theory; optical pumping; population inversion; quantum well lasers; semiconductor device models; semiconductor quantum wells; 17 nm; Al_0.2Ga_0.8As-GaAs-Al_0.2Ga _0.8As; Al_0.2Ga_0.8As-GaAs-Al_0.2Ga _0.8As single quantum well; continuum states; device fabrication; electrode subband structure; electron density; four-level laser system; optical pumping; optically-pumped intersubband laser generator; optically-pumped single quantum well; population inversion; pumping source; rate equation approach; Electrons; Gallium arsenide; Laser excitation; Laser transitions; Optical pumping; Optical superlattices; Pump lasers; Quantum cascade lasers; Quantum well lasers; Superconducting materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-5814-7

Type

conf

DOI

10.1109/SIM.2000.939231

Filename

939231