DocumentCode
1749148
Title
Dependence of temperature gradient on growth rate in CZ silicon
Author
Natsume, A. ; Tanahashi, K. ; Inoue, Naoko ; Mori, A.
Author_Institution
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
fYear
2000
fDate
2000
Firstpage
303
Lastpage
306
Abstract
The dependence of temperature gradient in a CZ-Si crystal on the growth rate is examined by analyzing the experimental result where growth rate was solely varied without changing any other conditions. Unreported data are reproduced using the heat balance equation at the interface. It is shown that the temperature gradient increases linearly with the growth rate. The mechanism is discussed in terms of the heat flow and the interface shape
Keywords
crystal growth from melt; elemental semiconductors; heat transfer; silicon; CZ silicon; CZ-Si crystal; Si; growth rate; heat flow; interface heat balance equation; interface shape; temperature gradient; Conductivity measurement; Crystals; Equations; Furnaces; Shape; Silicon; Solids; Temperature dependence; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-5814-7
Type
conf
DOI
10.1109/SIM.2000.939248
Filename
939248
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