Title :
Field emission characterization of the 10×10 singly-addressable double-gated polysilicon tip array
Author :
Chubun, N.N. ; Chakhovskoi, A.G. ; Hajra, M. ; Hunt, C.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Abstract :
A conventional field-emission cell, which usually consists of an emission tip surrounded by a small aperture in an extracting electrode (grid), has very complicated electron-optical characteristics. Electron beam trajectories are influenced not only by the electric field formed between the emission tip and the gate, but also by the field in the proximity of the emission site. This problem can be effectively resolved by controlling the shape of the individual electron beams
Keywords :
electron field emission; elemental semiconductors; silicon; vacuum microelectronics; 10×10 singly-addressable double-gated polysilicon tip array; Si; electron beam trajectories; electron-optical characteristics; emission tip; field-emission cell; small aperture; Cathodes; Coaxial components; Electrodes; Electron beams; Electron emission; Gold; Lenses; Shape control; Transmission line matrix methods; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939691
