DocumentCode :
1749309
Title :
Investigation of the characteristic changes on the SrTiO3:Pr,Al,Ga phosphors during the low voltage electron irradiation
Author :
Kim, Jin Young ; You, Yong Chan ; Duk Young Jeon ; Yang, Hong-Gun
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Tech., Taejon, South Korea
fYear :
2001
fDate :
2001
Firstpage :
213
Lastpage :
214
Abstract :
Basic experimental results of the SrTiO3:Pr,Al,Ga phosphor degradation are presented. Especially, based on the AES and XPS results it is understood that the prolonged low voltage and high current density of electron beam cause the characteristic change formed on the phosphor surface ((1) Accumulation of the overlaying carbon, (2) Damage of the crystal structure), being responsible for the rapid degradation of low voltage CL of the SrTiO3:Pr,Al,Ga phosphors
Keywords :
Auger electron spectra; X-ray photoelectron spectra; aluminium; cathodoluminescence; electron beam effects; gallium; phosphors; praseodymium; strontium compounds; AES; SrTiO3:Pr,Al,Ga; SrTiO3:Pr,Al,Ga phosphor; XPS; carbon overlayer; cathodoluminescence; crystal structure; low voltage electron irradiation; surface damage; Current density; Degradation; Displays; Electron beams; Fluorescence; Low voltage; Luminescence; Materials science and technology; Phosphors; Solid state circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
Type :
conf
DOI :
10.1109/IVMC.2001.939729
Filename :
939729
Link To Document :
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