DocumentCode :
1749315
Title :
Electron field emission of nanocrystalline diamond films co-doped with boron and nitrogen
Author :
Hsu, T. ; Lin, G.M. ; Lin, I.N.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2001
fDate :
2001
Firstpage :
273
Lastpage :
274
Abstract :
The effect of nitrogen/boron co-doping on characteristics of chemical vapor deposited diamond films was systematically examined. The electron field emission properties of the diamond films thus obtained are: emission current density Je=1,800 μA/cm2 at (Ea=20 V/μm applied field) and turn-on field E0 =4.4 V/μm, which are pronouncedly better than the pure nitrogen or boron doped diamond films
Keywords :
CVD coatings; boron; current density; diamond; electron field emission; elemental semiconductors; nanostructured materials; nitrogen; semiconductor doping; semiconductor growth; semiconductor thin films; C:B,N; chemical vapor deposited films; electron field emission properties; emission current density; nanocrystalline diamond:B,N films; Boron; Chemical vapor deposition; Conductive films; Conductivity; Current density; Electron emission; Materials science and technology; Nitrogen; Semiconductor films; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
Type :
conf
DOI :
10.1109/IVMC.2001.939759
Filename :
939759
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1749315
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