Title :
Comparative theoretical analysis of emission properties of silicon and diamond
Author :
Il´chenko, L.G. ; Il´chenko, V.V. ; Rangelow, I.W.
Author_Institution :
Inst. of Surface Chem., Acad. of Sci., Kiev, Ukraine
Abstract :
In the present work n-type silicon and diamond are considered on the basis of a theoretical model of the semiconductor´s surface, permitting the correct account of its microscopic structure and its change in the external electric field F
Keywords :
diamond; electron field emission; elemental semiconductors; silicon; C; Si; diamond; emission properties; Dielectric constant; Effective mass; Electrons; Lead compounds; Microelectronics; Microscopy; Semiconductor impurities; Semiconductor materials; Silicon; Vacuum technology;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939776
