DocumentCode
1749320
Title
Photovoltaic properties of fluorine tin oxide (SnO2:F)/silicon junctions prepared by electrostatic spray pyrolysis-dependence on oxidation time
Author
Zaouk, D. ; Zaatar, Y. ; Khoury, A. ; Llinares, C. ; Charles, J.-P. ; Bechara, J. ; Ajaka, M.
Author_Institution
Ecole Superieure d´´Ingenieurs de Beyrouth, Univ. of Saint-Joseph, Beirut, Lebanon
fYear
2000
fDate
2000
Firstpage
96
Lastpage
98
Abstract
Fluorine tin oxide (SnO2:F)/silicon ( on both n and p type) junctions are prepared at 375°C by a simple deposition technique called electrostatic spray prolysis (ESP). The SnO2:F/p-Si yielded to an ohmic contact. The photovoltaic behavior of SnO2:F/n-Si junctions as functions of oxidation time tOX is reported in the present paper with the view to understanding the role of the interfacial oxide layer in the photovoltaic process. The junctions have been characterized by I(V) and C(V) measurements. A maximum efficiency of 6.2% is observed (under 80 mw.cm-2 illumination) of SnO2:F/n-Si junctions at an oxidation time of 30s. The junctions are observed to be quite stable with time
Keywords
electric current measurement; fluorine; ohmic contacts; oxidation; p-n heterojunctions; silicon; solar cells; spray coating techniques; spray coatings; tin compounds; voltage measurement; 30 s; 375 C; 6.2 percent; C(V) measurements; I(V) measurements; SnO2:F-Si; SnO2:F/n-Si junctions; SnO2:F/silicon junctions; electrostatic spray pyrolysis; interfacial oxide layer; ohmic contact; oxidation time; photovoltaic properties; solar cell; Electrostatic precipitators; Fabrication; Ohmic contacts; Oxidation; Photovoltaic systems; Silicon; Solar power generation; Spraying; Sputtering; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location
Beirut
Print_ISBN
0-7803-7117-8
Type
conf
DOI
10.1109/CMPLES.2000.939871
Filename
939871
Link To Document