Title :
The effects of Sr/Ti ratio on the step coverage of SrTiO3 thin films fabricated using ECR-PEMOCVD
Author :
Yon Park, Soon ; Choi, Jongwan ; No, Kwanpo
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
SrTiO3 thin films were deposited on Si(p-type 100), Pt(1000 Å)/SiO2/Si and stepped Pt(800 Å)/SiO2/Si substrates using ECR-PEMOCVD to study the effects of the deposition temperature and the composition on the properties of SrTiO3 thin films. The crystallinity and the dielectric properties of SrTiO3 thin films were improved as the deposition temperature increased. But we could observe a distinct correlation not between the step coverage and the deposition temperature but between the step coverage and the composition. The composition of the film was changed by changing the flow rate of carrier gas of one precursor but fixing the other, being the deposition temperature fixed at 550°C. The step coverage was improved as the composition (Sr/Ti ratio) increased up to the stoichiometric composition, and showed a saturated value of about 55% as the Sr/Ti ratio increased beyond the stoichiometric composition. This correlation was speculated using the sticking coefficients of the precursor vapors
Keywords :
MOCVD coatings; dielectric thin films; plasma CVD coatings; strontium compounds; 550 C; ECR-PEMOCVD; Pt/SiO2/Si substrate; Si substrate; Sr/Ti ratio; SrTiO3; SrTiO3 thin film; chemical composition; crystallinity; deposition temperature; dielectric properties; step coverage; sticking coefficient; Annealing; Binary search trees; Dielectric substrates; Dielectric thin films; Materials science and technology; Plasma temperature; Random access memory; Semiconductor thin films; Sputtering; Strontium;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941512
