Title :
Characterization of sol-gel derived (Pb,La)TiO3 pyroelectric thin film detectors
Author :
Chen, Y.C. ; Wang, C.M. ; Huang, Y.T. ; Kao, P.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Taiwan
Abstract :
La-modified lead titanate (PLT) thin films were deposited on Pt/SiO2/Si substrates by spin coating with sol-gel processing. 1,3-propandiol was used as solvent to minimize the number of cycles of spin coating and drying processes to obtain the desired thickness of high quality thin film. The randomly oriented PLT thin film exhibits a relatively small dielectric constant and a large pyroelectric coefficient without poling treatment. Pyroelectric infrared (IR) detectors have been fabricated without the back side etching process The pyroelectric characteristics of point detectors with various La contents as a function of modulation frequency are compared. It was found that the PLT(10) detector has a large voltage responsivity of 3330 (V/W) at 20 Hz. The specific detectivity (D*) at 100 Hz is 6.2×107 cmHz½//W. The results showed that Pb1-x LaxTi1-x/4O3 thin film with x=0.10 [PLT(10)] was most suitable for use as a pyroelectric IR detector
Keywords :
ferroelectric thin films; infrared detectors; lanthanum compounds; lead compounds; pyroelectric detectors; sol-gel processing; spin coating; thin film devices; 1,3-propandiol solvent; La content; La-modified PLT thin films; Pb1-xLaxTi1-x/4O3 thin film; PbLaTiO3; Pt-SiO2-Si; Pt/SiO2/Si substrates; detector characterization; dielectric constant; infrared detectors; modulation frequency; point detectors; pyroelectric IR detectors; pyroelectric characteristics; pyroelectric coefficient; pyroelectric thin film detectors; sol-gel derived pyroelectric detectors; specific detectivity; spin coating; voltage responsivity; Coatings; Dielectric substrates; Dielectric thin films; Infrared detectors; Lead; Pyroelectricity; Semiconductor thin films; Solvents; Sputtering; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941546
