• DocumentCode
    1750019
  • Title

    MFIS- and MFMIS-structures using (Sr,Ba)Bi2Ta2O9 films for ferroelectric-gate FET applications

  • Author

    Tokumitsu, Eisuke ; Imafuku, Shusaku

  • Author_Institution
    Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    341
  • Abstract
    Metal-ferroelectric-insulator-semiconductor (MFIS) and metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using sol-gel derived (Sr,Ba)0.8Bi2.2Ta2O9 (SBBT) films are fabricated and characterized. It is shown that the remanent polarization decreases with Ba composition and that the typical Pr of Sr0.6Ba0.2Bi2.2Ta2O9 films is 3 μC/cm2. It is also demonstrated that a memory window of the MFMIS structure using the SBBT film is larger than that of MFMIS structures with conventional SBT films
  • Keywords
    MIS structures; MISFET; barium compounds; bismuth compounds; dielectric polarisation; ferroelectric storage; ferroelectric thin films; sol-gel processing; strontium compounds; (Sr,Ba)Bi2Ta2O9 films; (SrBa)Bi2Ta2O9; Ba composition; MFIS structures; MFMIS structures; Sr0.6Ba0.2Bi2.2Ta2O 9; ferroelectric-gate FET applications; memory window; metal-ferroelectric-insulator-semiconductor structures; metal-ferroelectric-metal-insulator-semiconductor structures; remanent polarization; sol-gel derived films; Capacitors; FETs; Ferroelectric films; Ferroelectric materials; Hysteresis; MOSFETs; Nonvolatile memory; Polarization; Random access memory; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.941568
  • Filename
    941568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1750019