DocumentCode :
175092
Title :
A 5th order 0.8/2.4 GHz programmable active band pass filter for power DAC applications
Author :
Zhiwei Xu ; Winklea, Deborah ; Oh, Thomas C. ; Kim, Sungho ; Chen, Steven T. W. ; Royter, Yakov ; Lau, Mogens ; Valles, Irma ; Hitko, Donald A. ; Li, James C.
Author_Institution :
HRL Labs., Malibu, CA, USA
fYear :
2014
fDate :
1-3 June 2014
Firstpage :
57
Lastpage :
60
Abstract :
A programmable active band pass filter (BPF) has been designed in a chip-scale heterogeneous integration technology, which intimately integrates InP HBTs on a deep scaled CMOS technology. Therefore, the active BPF can leverage both high performance of InP HBT and high density and programmability of CMOS. The BPF prototype consists of a programmable gain amplifier (PGA), a 5th order BPF core, and a buffer. The BPF center frequency is programmable from 0.8 GHz to 2.4 GHz with 150 MHz pass band and delivers >55 dB out-of-band rejection. Four gain steps: 0, 6, 12, and 16 dB, are enabled by the front PGA to trade off noise and linearity performances. Due to the > 300 GHz fT of InP HBTs, the BPF core can leverage active-RC architecture for high linearity owing to the close-loop implementation. The prototype occupies 1.5×1.02 mm2 area together with pads and draws 106/121 mA from a 3.3 V power supply for 0.8/2.4 GHz bands respectively. In addition, the prototype demonstrates out-of-band OIP3s of 23.52/23.51 dBm for 0.8/2.4 GHz bands at the high gain mode.
Keywords :
CMOS integrated circuits; III-V semiconductors; UHF filters; UHF integrated circuits; active filters; band-pass filters; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; programmable filters; 5th order programmable active band-pass filter; 5th order BPF core; CMOS process; HBTs; InP; PGA; active BPF; active-RC architecture; buffer; chip-scale heterogeneous integration technology; current 106 mA; current 121 mA; deep scaled CMOS technology; frequency 0.8 GHz to 2.4 GHz; gain 0 dB; gain 12 dB; gain 16 dB; gain 6 dB; out-of-band rejection; power DAC; programmable gain amplifier; voltage 3.3 V; Band-pass filters; CMOS integrated circuits; CMOS technology; Gain; Indium phosphide; Linearity; Silicon; Band pass filter (BPF); BiCMOS integrated circuit; Indium Phosphide (InP); heterojunction bipolar transistor (HBT); wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
ISSN :
1529-2517
Print_ISBN :
978-1-4799-3862-9
Type :
conf
DOI :
10.1109/RFIC.2014.6851657
Filename :
6851657
Link To Document :
بازگشت