Title :
K-band FMCW radar CMOS front-end ICs with 13.3 dBm output power
Author :
Gitae Pyo ; Jaemo Yang ; Hyunji Ku ; Choul-Young Kim ; Songcheol Hong
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
This paper presents CMOS front-end ICs with 13.3 dBm output power for K-band FMCW radar, which is integrated in 0.13-μm CMOS technology. The transmitter consists of a voltage controlled oscillator, divider chain, power amplifier, and additional buffers. The receiver consists of a low-noise amplifier, IQ mixers, an IQ generator, and buffers. The leakage problem can be mitigated by adopting differential topology and ground shielding. As a result, the receiver achieves a conversion gain of 35.7 dB, a P1dB of -31.6 dBm, and a DSB noise figure of 5.5 dB. The transmitter achieves the tuning range of 23.8~24.5 GHz and the phase noise of -104 dBc/Hz @ 1MHz offset. The receiver and transmitter chips consume 121.5 mW and 373.5 mW from a 1.5 V power supply, respectively. Using these two chips, the K-band FMCW radar module is implemented and verified by measuring the distance of an object.
Keywords :
CMOS integrated circuits; CW radar; FM radar; integrated circuit noise; phase noise; radar receivers; radar transmitters; DSB noise figure; IQ generator; IQ mixer; K-band FMCW radar CMOS front-end IC; buffer circuit; differential topology; divider chain; frequency 23.8 GHz to 24.5 GHz; gain 35.7 dB; ground shielding; low-noise power amplifier; noise figure 5.5 dB; power 121.5 mW; power 373.5 mW; receiver; size 0.13 mum; transmitter; voltage 1.5 V; voltage controlled oscillator; CMOS integrated circuits; Power amplifiers; Power generation; Radar measurements; Receivers; Voltage-controlled oscillators; CMOS; Frequency modulated continuous wave (FMCW); K-band; radar receiver; radar transmitter;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851663
