Title :
Variable Delay Transmission Lines in advanced CMOS SOI technology
Author :
Shlafman, Shlomo ; Sheinman, B. ; Elad, Danny ; Valdes-Garcia, A. ; Sanduleanu, Mihai A. T.
Author_Institution :
IBM Haifa Res. Lab., Haifa, Israel
Abstract :
Variable (Delay) Transmission Lines (VTL) offer digital tuning of fabricated transmission lines to compensate for process variation in active and passive devices of RF silicon design enabling self-healing and post-production circuit tuning. A novel compact semi-analytic single ended VTL model, enabling accurate RFIC circuit level simulation to enhance design flow, was developed. VTL structures were fabricated and measured in IBM 32nm CMOS SOI technology. The 30,50,80 Ohm VTL structures, consisting of metal crossing lines between the signal line and ground plane that are connected to ground through CMOS switches, exhibit over 11%, 15%, 18% delay tuning range respectively with low insertion loss and good agreement between measured results and developed model simulations.
Keywords :
CMOS integrated circuits; circuit tuning; delay lines; elemental semiconductors; integrated circuit design; radiofrequency integrated circuits; silicon; silicon-on-insulator; switches; CMOS switch; RF silicon design; RFIC circuit level simulation; active device; advanced IBM CMOS SOI technology; design flow enhancement; ground plane; metal crossing line; passive device; post-production digital circuit tuning; resistance 30 ohm; resistance 50 ohm; resistance 80 ohm; self-healing; semianalytic single ended VTL model; signal line; variable delay transmission line; CMOS integrated circuits; CMOS technology; Delays; Power transmission lines; Semiconductor device modeling; Transmission line measurements; Tuning; Compact model; Self-healing; Transmission lines; Variable delay lines;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851672