DocumentCode
175123
Title
Analysis of tunable Marchand baluns
Author
Boglione, Luciano ; Goodman, J.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
2014
fDate
1-3 June 2014
Firstpage
115
Lastpage
118
Abstract
The paper tackles the issue of designing tunable Marchand baluns and provides an insight on available approaches for integrating the structure in a semiconductor process. Limitation of the approach and possible solutions are also discussed. The analysis is applied to a Marchand balun fabricated in IBM 8HP SiGe process to demonstrate the feasibility of the approach. A mix of measured and simulated data is used to support the analysis at Q band. State-of-the-art performance is achieved.
Keywords
Ge-Si alloys; baluns; IBM 8HP process; Q band; SiGe; semiconductor process; tunable Marchand baluns; Capacitors; Impedance; Impedance matching; Microwave FET integrated circuits; Microwave circuits; Ports (Computers); Silicon germanium; Integrated circuit modeling; Linear circuits; Millimeter wave integrated circuits; Passive circuits; Silicon germanium; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location
Tampa, FL
ISSN
1529-2517
Print_ISBN
978-1-4799-3862-9
Type
conf
DOI
10.1109/RFIC.2014.6851673
Filename
6851673
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