• DocumentCode
    175140
  • Title

    Broadband CMOS stacked power amplifier using reconfigurable interstage network for envelope tracking application

  • Author

    Sunghwan Park ; Jung-Lin Woo ; Moon-Suk Jeon ; Unha Kim ; Youngwoo Kwon

  • Author_Institution
    Dept. of ECE & INMC, Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2014
  • fDate
    1-3 June 2014
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    A 2-stage stacked-FET power amplifier with a reconfigurable interstage network is developed for broadband envelope tracking application using SOI CMOS. The wideband PA is based on Class-J mode of operation, where output matching is realized with two-section low-pass network. Miller capacitors are also employed across the FET stack to guarantee Class-J-like operation for inner FET stacks. To overcome the bandwidth limit due to high-Q interstage matching, reconfigurable matching network is employed using SOI switch, allowing dual frequency-mode operation. The fabricated PA shows CW efficiencies in excess of 60% from 0.65 to 1.0 GHz. When operated with an ET supply modulator, overall ET PA system shows W-CDMA efficiencies higher than 50% from 0.68 to 0.92 GHz and LTE efficiencies higher than 40% from 0.65 to 0.95 GHz.
  • Keywords
    CMOS analogue integrated circuits; Long Term Evolution; UHF power amplifiers; code division multiple access; elemental semiconductors; silicon-on-insulator; wideband amplifiers; 2-stage stacked-FET power amplifier; CW efficiency; ET PA system; ET supply modulator; LTE efficiency; Miller capacitors; SOI CMOS; SOI switch; W-CDMA efficiency; broadband CMOS stacked power amplifier; class-J operation mode; dual-frequency-mode operation; envelope tracking application; frequency 0.65 GHz to 1.0 GHz; high-Q interstage matching; reconfigurable interstage network; reconfigurable matching network; two-section low-pass network; wideband PA; Bandwidth; Broadband amplifiers; CMOS integrated circuits; Harmonic analysis; Impedance; Power amplifiers; Broadband; CMOS; Class-J; LTE; SOI; W-CDMA; envelope tracking (ET); high-efficiency; power amplifier (PA); stacked-FET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2014 IEEE
  • Conference_Location
    Tampa, FL
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4799-3862-9
  • Type

    conf

  • DOI
    10.1109/RFIC.2014.6851681
  • Filename
    6851681