DocumentCode :
175140
Title :
Broadband CMOS stacked power amplifier using reconfigurable interstage network for envelope tracking application
Author :
Sunghwan Park ; Jung-Lin Woo ; Moon-Suk Jeon ; Unha Kim ; Youngwoo Kwon
Author_Institution :
Dept. of ECE & INMC, Seoul Nat. Univ., Seoul, South Korea
fYear :
2014
fDate :
1-3 June 2014
Firstpage :
145
Lastpage :
148
Abstract :
A 2-stage stacked-FET power amplifier with a reconfigurable interstage network is developed for broadband envelope tracking application using SOI CMOS. The wideband PA is based on Class-J mode of operation, where output matching is realized with two-section low-pass network. Miller capacitors are also employed across the FET stack to guarantee Class-J-like operation for inner FET stacks. To overcome the bandwidth limit due to high-Q interstage matching, reconfigurable matching network is employed using SOI switch, allowing dual frequency-mode operation. The fabricated PA shows CW efficiencies in excess of 60% from 0.65 to 1.0 GHz. When operated with an ET supply modulator, overall ET PA system shows W-CDMA efficiencies higher than 50% from 0.68 to 0.92 GHz and LTE efficiencies higher than 40% from 0.65 to 0.95 GHz.
Keywords :
CMOS analogue integrated circuits; Long Term Evolution; UHF power amplifiers; code division multiple access; elemental semiconductors; silicon-on-insulator; wideband amplifiers; 2-stage stacked-FET power amplifier; CW efficiency; ET PA system; ET supply modulator; LTE efficiency; Miller capacitors; SOI CMOS; SOI switch; W-CDMA efficiency; broadband CMOS stacked power amplifier; class-J operation mode; dual-frequency-mode operation; envelope tracking application; frequency 0.65 GHz to 1.0 GHz; high-Q interstage matching; reconfigurable interstage network; reconfigurable matching network; two-section low-pass network; wideband PA; Bandwidth; Broadband amplifiers; CMOS integrated circuits; Harmonic analysis; Impedance; Power amplifiers; Broadband; CMOS; Class-J; LTE; SOI; W-CDMA; envelope tracking (ET); high-efficiency; power amplifier (PA); stacked-FET;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
ISSN :
1529-2517
Print_ISBN :
978-1-4799-3862-9
Type :
conf
DOI :
10.1109/RFIC.2014.6851681
Filename :
6851681
Link To Document :
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