Title :
A 112–134 GHz SiGe amplifier with peak output power of 120 mW
Author :
Hsin-Chang Lin ; Rebeiz, Gabriel M.
Author_Institution :
ECE, Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
A fully-integrated 8-way power combining amplifier for 120 GHz application in an advanced 90 nm SiGe HBT technology is presented. The single-ended PA breakout has a small-signal gain of 20 dB and Psat of 12.5-13.8 dBm at 114 to 130 GHz. The 8-way power combining PA achieves a small-signal gain of 15 dB and peak Psat of 20-20.8 dBm at 114-126 GHz with a PAE of 7.6-6.3 %. To our knowledge, this is the highest power silicon-based D-band amplifier to-date.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave power amplifiers; semiconductor materials; SiGe; efficiency 7.6 percent to 6.3 percent; frequency 112 GHz to 134 GHz; fully-integrated 8-way power combining amplifier; gain 15 dB; gain 20 dB; power silicon-based D-band amplifier; silicon-germanium HBT technology; silicon-germanium amplifier; single-ended PA breakout; size 90 nm; small-signal gain; Gain; Impedance; Microstrip; Power generation; Power transistors; Silicon germanium; Transistors; D-band; Power amplifier (PA); millimeter-wave (mmW) integrated circuits; silicon germanium (SiGe) HBT;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851686
