Title :
A high-power, low-loss W-band SPDT switch using SiGe PIN diodes
Author :
Song, Peter ; Schmid, Robert L. ; Ulusoy, A. Cagri ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper presents a W-band SPDT switch implemented using PIN diodes in a new 90 nm SiGe BiCMOS technology. The SPDT switch achieves a minimum insertion loss of 1.4 dB and an isolation of 22 dB at 95 GHz, with less than 2 dB insertion loss from 77-134 GHz, and greater than 20 dB isolation from 79-129 GHz. The input and output return losses are greater than 10 dB from 73-133 GHz. By reverse biasing the off-state PIN diodes, the P1dB is larger than +24 dBm. To the authors´ best knowledge, these results demonstrate the lowest loss and highest power handling capability achieved by a W-band SPDT switch in any silicon-based technology reported to date.
Keywords :
Ge-Si alloys; millimetre wave diodes; p-i-n diodes; semiconductor materials; switches; SiGe; frequency 73 GHz to 134 GHz; high-power low-loss W-band SPDT switch; insertion loss; loss 1.4 dB; off-state PIN diodes; power handling capability; reverse biasing; silicon-based technology; silicon-germanium BiCMOS technology; silicon-germanium PIN diodes; size 90 nm; BiCMOS integrated circuits; Insertion loss; PIN photodiodes; Radio frequency; Silicon germanium; Switches; Topology; PIN diode; SPDT switch; SiGe; W-band; millimeter wave integrated circuits; singlepole double-throw;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851695
