Electron-hole processes in an anti-lock m-n contact

The presence of inductive properties for contact of Sn-high resistance germanium of n-type has been shown experimentally. This is anti-closed m-n contact, which has φ_m<φ_n, where φ_m and φ_n are the work functions of electron from metal m- and n-type semiconductor respectively. The inductive properties of anticlosed m-n contact cannot be explained in the framework of metal-semiconductor contact theory. Owing to it, the electron-hole processes into anti-closed m-n contact are investigated at applied direct voltage. The energy conditions of dynamic equilibrium for the space-charge region (SCR) of m-n contact, which describes the dependence of boundary magnitude upon applied voltage, are determined. The equation of volt-ampere characteristics is defined. It is shown that the differential capacitance of m-n contact is changing the sign from positive to negative under growth of reverse voltage, and is changing exponentially under growth of forward voltage