Title :
Dynamics of microwave FET behaviour
Author :
Parker, Anthony ; Rathmell, James
Author_Institution :
Collaborative Nonlinear Electonics Res. Fac., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
Keywords :
high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device measurement; HEMT; dispersion; dynamic characteristics; microwave FET; nonthermal effects; pulsed-bias measurement system; thermal effects; Microwave FETs; Microwave devices;
Conference_Titel :
Circuits and Systems, 2001. Tutorial Guide: ISCAS 2001. The IEEE International Symposium on
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-7113-5
DOI :
10.1109/TUTCAS.2001.946944
