DocumentCode :
1751959
Title :
Analysis and test of overhanging-metal microstrip detectors
Author :
Passeri, D. ; Ciampolini, P. ; Bilei, G.M. ; Angarano, M.M. ; Moscatelli, E.
Author_Institution :
Dipt. di Ingegneria Electron. e dell´´Inf., Perugia Univ., Italy
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
42457
Abstract :
The adoption of overhanging-metal contacts have been suggested as an effective mean to limit breakdown risks in heavy-damaged, high-voltage biased microstrip detectors. In this summary, the influence of such overhangs on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of detectors featuring variable overhang extensions and different width/pitch ratios, and numerical simulation has been exploited to provide physical interpretation of the experimental findings. In particular, the non-trivial dependence of interstrip capacitance over geometrical parameters is discussed. By looking at leakage currents and charge-collection as well, it is shown that limited-extension overhangs still have highly beneficial effects on the breakdown properties, while having no practical drawbacks on the detector performance
Keywords :
capacitance; leakage currents; semiconductor device noise; silicon radiation detectors; breakdown; charge-collection; interstrip capacitance; leakage currents; noise; numerical simulation; overhanging-metal contacts; overhanging-metal microstrip detectors; Breakdown voltage; Capacitance; Electric breakdown; Microstrip antenna arrays; Numerical simulation; Radiation detectors; Risk analysis; Silicon; Strips; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location :
Lyon
ISSN :
1082-3654
Print_ISBN :
0-7803-6503-8
Type :
conf
DOI :
10.1109/NSSMIC.2000.949005
Filename :
949005
Link To Document :
بازگشت