Title :
Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory
Author :
Ozen, Mustafa ; Acar, Mustafa ; van der Heijden, Mark P. ; Apostolidou, M. ; Leenaerts, Domine M. W. ; Jos, Rik ; Fager, Christian
Author_Institution :
Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; semiconductor materials; wideband amplifiers; BiCMOS class-E SMPA; collector efficiency; continuous class-E mode theory; frequency 1.3 GHz to 2.2 GHz; generic wideband SMPA design approach; wideband watt-level silicon-germanium BiCMOS switching mode power amplifier; BiCMOS integrated circuits; CMOS integrated circuits; Harmonic analysis; Impedance; Power generation; Silicon germanium; Switches; CMOS; SiGe; class-e; efficiency; wideband;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851709
