Title :
A study of the effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased 10 B-coated high-purity epitaxial GaAs thermal neutron detectors
Author :
Gersch, H.K. ; McGregor, D.S. ; Simpson, P.A.
Author_Institution :
Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
High-purity epitaxial GaAs 10B-coated thermal neutron detectors advantageously operate at room temperature without externally applied voltage. Sample detectors were systematically irradiated at fixed grid locations near the core of a 2 MW research reactor to determine their operational neutron dose threshold. Reactor pool locations were assigned so that fast and thermal neutron fluxes to the devices were similar. Neutron fluences ranged between 1011 n/cm2 to 1016 n/cm2. GaAs detectors were exposed to exponential fluences of base ten. Twelve detector designs were irradiated and studied, differentiated between p-i-n diodes and Schottky barrier diodes. The irradiated 10B-coated detectors were tested for neutron detection sensitivity in a thermalized neutron beam
Keywords :
Schottky diodes; dosimetry; fission reactor instrumentation; fission reactor monitoring; fission research reactors; gamma-ray detection; neutron detection; neutron flux; p-i-n diodes; radiation monitoring; semiconductor counters; semiconductor epitaxial layers; 2 MW; 293 K; B-GaAs; GaAs; Schottky barrier diodes; fast neutron flux; high-purity epitaxial GaAs thermal neutron detectors; incremental gamma-ray doses; incremental neutron fluences; neutron detection sensitivity; operational neutron dose threshold; p-i-n diodes; performance; reactor pool locations; research reactor; room temperature; self-biased 10B-coated thermal neutron detectors; thermal neutron flux; thermalized neutron beam; Detectors; Gallium arsenide; Inductors; Neutrons; P-i-n diodes; Schottky barriers; Schottky diodes; Temperature; Testing; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location :
Lyon
Print_ISBN :
0-7803-6503-8
DOI :
10.1109/NSSMIC.2000.949045