Title :
The effect of amorphous Si thickness in metal induced lateral crystallization technology
Author :
Leung, T.C. ; Cheng, C.F. ; Chan, W.Y. ; Poon, M.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
Metal Induced Lateral Crystallization (MILC) was carried out for amorphous Si (a-Si) with different thickness. The effect of a-Si thickness on MILC process was studied. We found that longer MILC region was obtained when a thinner a-Si layer was used. Thin-film transistors (TFT) were fabricated on the MILC poly-Si with different thickness. It was found that the TFTs on the thin MILC poly-Si layer have better performance than those on the thick MILC poly-Si layer. The results show that a thin (1000 Å) a-Si layer should be used for MILC TFT fabrication, in order to obtain better TFT performances
Keywords :
amorphous semiconductors; annealing; crystallisation; elemental semiconductors; semiconductor technology; semiconductor thin films; silicon; silicon-on-insulator; thin film transistors; 1000 A; SOI; Si; TFr fabrication; a-Si thickness; amorphous Si thickness; metal induced lateral crystallization technology; silicon on insulator technology; Amorphous materials; Annealing; Crystallization; Doping; Fabrication; Insulation; Silicon on insulator technology; Substrates; Temperature; Thin film transistors;
Conference_Titel :
TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology
Print_ISBN :
0-7803-7101-1
DOI :
10.1109/TENCON.2001.949620
