A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power electronics

Author

Kang, Ey Goo ; Moon, Seung Hyun ; Sung, Man Yong

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

1

fYear

2001

fDate

2001

Firstpage

473

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19 μm. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130 V. Conventional LIGBT and LTIGBT of the same size were 60 V and 100 V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately

Keywords

electrodes; insulated gate bipolar transistors; power transistors; semiconductor device breakdown; 130 V; 19 micron; LTEIGBT; electric field; forward blocking voltage; latch-up current density; lateral trench electrode insulated gate bipolar transistor; power electronics; punch-through breakdown; trench-type electrode; Anodes; Cathodes; Current density; Electric breakdown; Electrodes; Insulated gate bipolar transistors; Moon; Power integrated circuits; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology

Print_ISBN

0-7803-7101-1

Type

conf

DOI

10.1109/TENCON.2001.949638

Filename

949638