Title :
A dual band CMOS power amplifier for an S/X band high resolution radar system
Author :
Junhyuk Choi ; Byungjoon Kim ; Duksoo Kim ; Jaeyong Ko ; Sangwook Nam
Author_Institution :
Sch. of Electr. Eng. & INMC, Seoul Nat. Univ., Seoul, South Korea
Abstract :
This paper presents a dual band CMOS power amplifier (PA) for an S/X band high resolution radar system. Reconfigurable band-switchable matching networks and a dual band Wilkinson power combiner (impedance transformer) are used for an output matching network. The PA is fabricated using a UMC 0.13 μm CMOS process. It provides a saturated output power of 24.8 dBm and 25.3 dBm with the power-added-efficiency (PAE) of 27.2 % and 36.4 % at 8.4 GHz and 3.0 GHz, respectively. The 3-dB bandwidth is 2.5 GHz (7.4-9.9 GHz) and 2.3 GHz (2.7-5.0 GHz). This amplifier achieves a fractional bandwidth of 29% and 60 % at each band, and shows suitable performance for use in a high resolution radar system.
Keywords :
CMOS analogue integrated circuits; impedance convertors; microwave integrated circuits; microwave power amplifiers; power combiners; radar applications; PA; PAE; S-X band high resolution radar system; UMC CMOS process; Wilkinson power combiner; bandwidth 2.3 GHz; bandwidth 2.5 GHz; dual band power amplifier; efficiency 27.2 percent; efficiency 36.4 percent; frequency 2.7 GHz to 5.0 GHz; frequency 7.4 GHz to 9.9 GHz; impedance transformer; power-added-efficiency; reconfigurable band-switchable matching networks; Bandwidth; CMOS integrated circuits; Dual band; Impedance matching; Power amplifiers; Radar; Switches; CMOS; Dual band; power amplifier (PA); radar system; switch;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851735
