Title :
A 19.1dBm segmented power-mixer based multi-Gbps mm-Wave transmitter in 32nm SOI CMOS
Author :
Dasgupta, Kankar ; Sengupta, K. ; Pai, A. ; Hajimiri, Ali
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
Abstract :
A high-power, fully-integrated, mm-wave power mixer based transmitter capable of generating highspeed, complex non-constant envelope modulations is implemented in a 32nm SOI CMOS process. Segmented power generation approach is shown to be suitable for direct digital modulation as well as efficiency improvement at back-off power levels. The transmitter has a peak output power of 19.1dBm at 51GHz with a drain efficiency of 14.2% and a peak PAE of 10.1%. Measurements results show high-speed modulations for BPSK, QPSK, ASK, m-ASK and 16-QAM. Reliability of the transmitter has also been verified against worst case segmentation at 30% higher supply voltage.
Keywords :
CMOS integrated circuits; amplitude shift keying; elemental semiconductors; field effect MIMIC; integrated circuit reliability; millimetre wave integrated circuits; millimetre wave mixers; phase shift keying; quadrature amplitude modulation; radio transmitters; silicon; silicon-on-insulator; 16-QAM; ASK; BPSK; PAE; QPSK; SOI CMOS process; Si; direct digital modulation; drain efficiency; efficiency 10.1 percent; efficiency 14.2 percent; frequency 51 GHz; high-power fully-integrated segmented mmwave power mixer; high-speed complex nonconstant envelope modulation; m-ASK; multiGbps mmwave transmitter; reliability; segmented power generation approach; size 32 nm; Amplitude shift keying; CMOS integrated circuits; Mixers; Phase shift keying; Power generation; Transmitters; CMOS Power Amplifiers; Non-constant Envelope Modulation; Power Mixer; mm-wave;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851737
