• DocumentCode
    175249
  • Title

    A 200GHz power mixer in 130nm-CMOS employing nonlinearity engineering

  • Author

    Sharma, Jaibir ; Dinc, Tolga ; Krishnaswamy, Harish

  • Author_Institution
    Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
  • fYear
    2014
  • fDate
    1-3 June 2014
  • Firstpage
    347
  • Lastpage
    350
  • Abstract
    CMOS high-mmWave/sub-mmWave sources leverage device nonlinearity, either in oscillators or frequency multipliers, to generate harmonics beyond the technology fmax. We propose a power mixer topology that exploits non-linearity engineering to enhance the output harmonic content. By engineering the amplitude and phase of the fundamental and second-harmonic content in the mixer device voltage waveforms, the output third harmonic power is enhanced significantly beyond that achievable in conventional frequency triplers. A 200 GHz power mixer in 130 nm CMOS generates 50 μW of output power at a frequency 1.5× higher than fmax.
  • Keywords
    CMOS integrated circuits; field effect MIMIC; millimetre wave mixers; submillimetre wave integrated circuits; submillimetre wave mixers; CMOS high-mm-wave-sub-mmwave sources; device nonlinearity; frequency 200 GHz; frequency multipliers; frequency triplers; fundamental-harmonic content; mixer device voltage waveforms; nonlinearity engineering; oscillators; output harmonic content; output third harmonic power; power 50 muW; power mixer topology; second-harmonic content; size 130 nm; CMOS integrated circuits; Harmonic analysis; Logic gates; Mixers; Oscillators; Power generation; Power system harmonics; CMOS; frequency multipliers; mm-wave;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2014 IEEE
  • Conference_Location
    Tampa, FL
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4799-3862-9
  • Type

    conf

  • DOI
    10.1109/RFIC.2014.6851738
  • Filename
    6851738