DocumentCode
1753079
Title
Line-Structure Parameters Measurement of Single-Crystal-Silicon Step Based on Multi-scale Analysis
Author
Li, Hongbo ; Zhao, Xuezeng
Author_Institution
Electromech. Sch., Harbin Inst. of Technol.
Volume
1
fYear
0
fDate
0-0 0
Firstpage
4931
Lastpage
4934
Abstract
To detect side edges of single-crystal-silicon step scanned by AFM, the measurement data of the step are analyzed using wavelet theory. After the texture in different scale of image is detected, which have the character of multi-scale resolution and multi-orientational sub-image, the side edges of the step are reconstructed according to the character of AFM. Then the line-structure parameters of the step are calculated respectively based on analyzing the detected edge character, such as line-width, line-width roughness and line edge roughness. Since multi-scale analysis supports that lager-scale sub-image approaches original image and smaller-scale sub-image gives more details of original one, it has more potential in the exact parameters research of step topography
Keywords
atomic force microscopy; edge detection; image reconstruction; splines (mathematics); surface topography measurement; wavelet transforms; atomic force microscopy; center B-spline wavelet; edge reconstruction; image texture; line edge roughness; line-structure parameter measurement; line-width roughness; multiorientational subimage; multiscale analysis; multiscale resolution; side edge detection; single-crystal-silicon step; step topography; wavelet theory; Electric variables measurement; Fabrication; Focusing; Image edge detection; Instruments; Insulation; Surfaces; Time measurement; Wavelet analysis; Wavelet transforms; AFM; Center B spline wavelet; line edge roughness; line width; line width roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Control and Automation, 2006. WCICA 2006. The Sixth World Congress on
Conference_Location
Dalian
Print_ISBN
1-4244-0332-4
Type
conf
DOI
10.1109/WCICA.2006.1713323
Filename
1713323
Link To Document