Title :
Electronic Properties of Silicon Nanowires: Confined Phonons and Surface Roughness
Author :
Ramayya, E.B. ; Knezevic, I. ; Vasileska, D. ; Goodnick, S.M.
Author_Institution :
Department of Electrical and Computer Engineering, University of Wisconsin — Madison, Madison, WI 53706, USA, ramayya@wisc.edu
Abstract :
Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-Carlo-Poisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando’s model are investigated.
Keywords :
confined phonons; silicon nanowire; surface roughness; Acoustic scattering; Electron mobility; Light scattering; Nanowires; Optical scattering; Particle scattering; Phonons; Rough surfaces; Silicon; Surface roughness; confined phonons; silicon nanowire; surface roughness;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247556
